4-114 up to 6 ghz low noise silicon bipolar transistor technical data features ? low noise figure: 1.7 db typical at 2.0 ghz 3.0 db typical at 4.0 ghz ? high associated gain: 14.0 db typical at 2.0 ghz 10.0 db typical at 4.0 ghz ? high gain-bandwidth product: 8.0 ghz typical f t ? cost effective ceramic microstrip package AT-41435 35 micro-x package description hewlett-packards AT-41435 is a general purpose npn bipolar transistor that offers excellent high frequency performance. the AT-41435 is housed in a cost effective surface mount 100 mil micro-x package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w at 1 ghz, makes this device easy to use as a low noise amplifier. the AT-41435 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8925e
4-115 AT-41435 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2,3] mw 500 t j junction temperature c 200 t stg storage temperature [4] c -65 to 200 thermal resistance [2,5] : q jc = 200 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 5 mw/ c for t c > 100 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. after a device has been soldered into a circuit, it may be safely stored up to 200 c. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. electrical specifications, t a = 25 c symbol parameters and test conditions units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 11.5 f = 4.0 ghz 6.0 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 19.0 v ce = 8 v, i c = 25 ma f = 4.0 ghz 18.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 14.0 f = 4.0 ghz 9.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.3 f = 2.0 ghz 1.7 2.0 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 18.5 f = 2.0 ghz 13.0 14.0 f = 4.0 ghz 10.0 f t gain bandwidth product: v ce = 8 v, i c = 25 ma ghz 8.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 270 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 c cb collector base capacitance [1] : v cb = 8 v, f = 1 mhz pf 0.2 note: 1. for this test, the emitter is grounded.
4-116 AT-41435 typical performance, t a = 25 c frequency (ghz) figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) i c (ma) figure 3. optimum noise figure and associated gain vs. collector current and collector voltage. f = 2.0 ghz. gain (db) 0 1020 3040 frequency (ghz) figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 25 ma. gain (db) 0.1 0.5 0.3 1.0 3.0 6.0 24 21 18 15 12 9 6 3 0 8 6 4 2 0 nf (db) 4 3 2 1 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 16 15 14 13 12 g a nf o nf 50 i c (ma) figure 6. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 12 8 4 0 |s 21e | 2 gain (db) 0 1020 3040 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2 1.0 ghz 10 v 4 v g a nf o 6 v 10 v 4 v 6 v i c (ma) figure 2. output power and 1 db compressed gain vs. collector current and frequency. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 3040 p 1db g 1db 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz figure 4. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v. i c (ma) gain (db) 0 1020 3040 6 4 2 0 nf o (db) 16 14 12 10 8 g a nf o 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz
4-117 AT-41435 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .80 -32 28.0 24.99 157 -39.2 .011 82 .93 -12 0.5 .50 -110 21.8 12.30 108 -29.6 .033 52 .61 -28 1.0 .40 -152 16.6 6.73 85 -26.2 .049 56 .51 -30 1.5 .38 -176 13.3 4.63 71 -24.0 .063 59 .48 -32 2.0 .39 166 11.0 3.54 60 -21.9 .080 58 .46 -37 2.5 .41 156 9.3 2.91 53 -20.4 .095 61 .44 -40 3.0 .44 145 7.9 2.47 43 -18.8 .115 61 .43 -48 3.5 .46 137 6.7 2.15 33 -17.5 .133 58 .43 -58 4.0 .46 127 5.6 1.91 23 -16.0 .153 53 .45 -68 4.5 .47 116 4.7 1.72 13 -15.0 .178 50 .46 -75 5.0 .49 104 4.0 1.58 3 -13.9 .201 47 .48 -82 5.5 .52 91 3.3 1.45 -7 -13.0 .224 40 .47 -89 6.0 .59 81 2.5 1.34 -17 -12.1 .247 36 .43 -101 AT-41435 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .63 -50 31.8 39.08 146 -40.0 .010 83 .84 -18 0.5 .39 -137 22.9 13.97 99 -31.4 .027 60 .50 -26 1.0 .36 -171 17.2 7.28 80 -27.1 .044 67 .45 -26 1.5 .36 171 13.9 4.94 68 -23.5 .067 66 .43 -30 2.0 .38 156 11.5 3.76 58 -21.6 .083 63 .41 -34 2.5 .40 149 9.8 3.08 52 -19.6 .105 63 .39 -38 3.0 .43 140 8.3 2.61 43 -18.3 .122 64 .38 -47 3.5 .45 132 7.2 2.28 33 -16.8 .144 59 .39 -57 4.0 .46 122 6.1 2.02 23 -15.6 .165 55 .40 -67 4.5 .46 112 5.2 1.82 14 -14.6 .185 50 .42 -75 5.0 .47 101 4.4 1.66 4 -13.7 .207 45 .43 -81 5.5 .51 89 3.7 1.54 -5 -12.6 .233 39 .42 -89 6.0 .58 79 3.0 1.41 -15 -11.8 .257 33 .37 -101 a model for this device is available in the device models section. AT-41435 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.2 .12 3 0.17 0.5 1.2 .10 14 0.17 1.0 1.3 .05 28 0.17 2.0 1.7 .30 -154 0.16 4.0 3.0 .54 -118 0.35
4-118 35 micro-x package dimensions 13 4 2 emitter dia. emitter collector base .085 2.15 016 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25
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